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<\/p>\nFor some time now, silicon-based power transistors (MOSFETs) have been considered the gold standard in the low to medium power segment of power supply solutions. They have maintained their position as a standard component in converter technology to this day thanks to the continued development of the technology over the decades and their large-scale production.<\/p>\n
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The further development of III-V semiconductors has allowed for the evolution of power transistors based on gallium nitride (GaN), which offer significant advantages due to a band gap that is three times larger than that of silicon.<\/p>\n
One key advantage is the material\u2019s breakdown field strength \u2013 higher by a factor of 10 \u2013 which allows for the construction of thinner structures with the same reverse voltage. This makes it possible to significantly reduce the on-state resistance RDS,on of the transistor, resulting in lower conduction losses. Increased electron mobility compared to silicon transistors also leads to lower switching losses and enables higher switching velocities.<\/p>\n
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\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0Comparison of selected semiconductor properties<\/em><\/span><\/p>\n A common objective when designing power supply solutions such as power packs and charging units is the maximization of efficiency and power density. Two limiting design elements are always the maximum dissipated power in the form of heat loss through the housing and the spatial requirements of the electronic components themselves.<\/p>\n This is precisely where the advantages of the aforementioned GaN semiconductors come in. The lower switching and conduction losses equal less heat dissipation, which, in terms of device design, results in smaller packaging surface necessary for heat dissipation. In addition, higher switching frequencies of the electronic converters allow for the usage of smaller magnetic components such as coils and converters. As a result, GaN technology enables increased power density and optimization of the device\u2019s weight while retaining the same performance levels seen in the classic silicon transistor solutions thanks to the smaller size.<\/p>\nSmall and powerful<\/h4>\n
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